| PART |
Description |
Maker |
| TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| Q62703-Q78 LD260 LD262 LD263 LD264 LD265 LD266 LD2 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays 砷化镓红外Lumineszenzdioden - Zeilen砷化镓红外发射器阵列
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| KEL5002A-A OPE5594A |
GaAs Infrared Emitter
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| SFH425 SFH42001 SFH420 |
GaAs Infrared Emitter in SMT Package
|
OSRAM GmbH
|
| LD242E7800 Q62703-Q3509 LD242 LD242-2 LD242-3 Q627 |
GaAs Infrared Emitter
DSUB 11X1 M PCB G30 砷化镓红外发射器
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Siemens Group
SIEMENS AG
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| MTE8080P |
5mm Metal Can IR Emitter
Infrared Emitter
|
MARKTECH[Marktech Corporate]
|
| MIE-134G2 134G2 |
Infrared Emitting Diodes (IRED)
GaAs/GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| SFH409-2 Q62702-P1001 Q62702-P1002 Q62702-P860 SFH |
From old datasheet system
GaAs Infrared Emitter
Mica Film Capacitor; Capacitance:47pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
CAP MICA 43PF 300V SMD 砷化镓红外发射器
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
